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04N50C3

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

ISPD04N50C3

N-ChannelMOSFETTransistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISPP04N50C3

N-ChannelMOSFETTransistor

•DESCRITION •Ultralowgatecharge •Improvedtranscondutance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA04N50C3

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA04N50C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPA04N50C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPB04N50C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPB04N50C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPB04N50C3

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SPD04N50C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPD04N50C3

N-ChannelMOSFETTransistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPD04N50C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPD04N50C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP04N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP04N50C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP04N50C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP04N50C3

N-ChannelMOSFETTransistor

•DESCRITION •Ultralowgatecharge •Improvedtranscondutance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
23+
PG-TO220-3
90000
只做原厂渠道价格优势可提供技术支持
询价
INFINEON/英飞凌
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
INFINEON
23+
P-TO220-3-1
8000
只做原装现货
询价
INFINEON
TO-220
250
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
INFINEON
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
infineon technologies
23+
NA
25987
原装现货 库存特价/长期供应元器件代理经销
询价
infineon
2020+
P-TO220-3-1
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
TOSHIBA/东芝
23+
TO-251
69820
终端可以免费供样,支持BOM配单!
询价
Infineon(英飞凌)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
更多SPP04N50C3其他被动元件供应商 更新时间2024-6-23 17:18:00