N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • Improved transcondutance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.95Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.51 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：292.69 Kbytes 页数：13 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件：11.43318 Mbytes 页数：13 Pages

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

文件：269.67 Kbytes 页数：2 Pages

ISC

无锡固电