OptiMOS Power-Transistor

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated

文件：413.11 Kbytes 页数：8 Pages

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OptiMOS Power-Transistor

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated

文件：415.65 Kbytes 页数：8 Pages

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OptiMOS Power-Transistor

Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated

文件：269.96 Kbytes 页数：8 Pages

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OptiMOS Power-Transistor

Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated

文件：415.66 Kbytes 页数：8 Pages

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OptiMOS Power-Transistor

Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated

文件：422.48 Kbytes 页数：8 Pages

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OptiMOS Power-Transistor

Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated • Integrated gate resistance for easy parallel connection

文件：325.34 Kbytes 页数：8 Pages

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SIPMOS Power-Transistor

Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated

文件：108.75 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

文件：331.91 Kbytes 页数：2 Pages

ISC

无锡固电

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：625.63 Kbytes 页数：15 Pages

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New revolutionary high voltage technology Ultra low gate charge

文件：1.30229 Mbytes 页数：15 Pages

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