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SPI07N60C3

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScomplian

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI07N60C3

New revolutionary high voltage technology Ultra low gate charge

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI07N60C3

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI07N60C3

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP07N60C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP07N60C3

NewrevolutionaryhighvoltagetechnologyUltralowgatecharge

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP07N60C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScomplian

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP07N60C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPU07N60C3

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPU07N60C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPU07N60C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPU07N60C3

CoolMOSPowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-251andTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;Rohscom

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    SPI07N60C3

  • 功能描述:

    MOSFET COOL MOS PWR TRANS MAX 650V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
2021+
TO-262
16860
原装进口假一罚十
询价
INFINEON/英飞凌
21+
TO-262
60000
原装正品进口现货
询价
INFINEON/英飞凌
22+
TO-262
9800
只做原装正品假一赔十!正规渠道订货!
询价
Infineon(英飞凌)
23+
-
7793
支持大陆交货,美金交易。原装现货库存。
询价
IFN
2405+
TO-262
4475
只做原装正品渠道订货
询价
INFINEON
11MY
TO-262
1985
原厂直销
询价
INFINEON
08+(pbfree)
P-TO262-3-1
8866
询价
INF
23+
TO-220
5000
原装正品,假一罚十
询价
INF
1728+
TO-262
8500
只做原装进口,假一罚十
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多SPI07N60C3供应商 更新时间2024-9-21 8:36:00