OptiMOS Power-Transistor

Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant

文件：637.45 Kbytes 页数：9 Pages

INFINEON

英飞凌

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：1.02024 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

OptiMOS Power-Transistor

Feature • N-Channel • Logic Level • Low on-resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching applications

文件：547.02 Kbytes 页数：8 Pages

INFINEON

英飞凌

N-Channel 30-V (D-S) MOSFET

文件：1.68829 Mbytes 页数：8 Pages

VBSEMI

微碧半导体