丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

文件：263.74 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Qualified according to JEDEC0) for target applications • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：670.73 Kbytes 页数：11 Pages

Infineon

英飞凌

SIPMOS Power-Transistor

Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated

文件：483.75 Kbytes 页数：8 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：341.43 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：21N50C3；Package：PG-TO263；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC) for target applications

文件：1.29179 Mbytes 页数：12 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：332.65 Kbytes 页数：2 Pages

ISC

无锡固电

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC) for target applications

文件：1.29179 Mbytes 页数：12 Pages

Infineon

英飞凌

25 amp single phase bridge rectifiers

文件：142.16 Kbytes 页数：2 Pages

Microsemi

美高森美

Single Phase Bridge - High Voltage SPB Series 2.0A ??70ns

文件：142.47 Kbytes 页数：2 Pages

VMI

Single Phase Bridge - High Voltage SPB Series 2.0A ??70ns

文件：142.47 Kbytes 页数：2 Pages

VMI