DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：175.15 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

Ensemble de panneau pivotant

文件：52.12 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

Proximity Magnetic Sensors Rectangular Housing SPB2 Series

文件：179.91 Kbytes 页数：3 Pages

CARLOGAVAZZI

佳乐

5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time

Single Phase Bridge - High Voltage SPB Series 2.0A • 70ns

文件：39.95 Kbytes 页数：2 Pages

VMI

5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time

Single Phase Bridge - High Voltage SPB Series 2.0A • 70ns

文件：51.68 Kbytes 页数：2 Pages

VMI

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：163.38 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：20N60C3；Package：TO-263-3；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.21 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

文件：263.74 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Qualified according to JEDEC0) for target applications • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：670.73 Kbytes 页数：11 Pages

Infineon

英飞凌