丝印：C385；Package：SOT-23(DBV)；SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

文件：1.97409 Mbytes 页数：37 Pages

TI

德州仪器

丝印：C385；Package：SOT-23；Single 2-Input NAND Gate With Open-Drain Output

文件：2.50818 Mbytes 页数：38 Pages

TI

德州仪器

丝印：C385；Package：SOT-23(DBV)；SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

文件：1.97409 Mbytes 页数：37 Pages

TI

德州仪器

N/A

TI

德州仪器

上传：深圳卓越飞讯科技有限公司

VSSOP8

TEXAS INSTRUMENTS

上传：深圳市恒益昌电子有限公司