SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output

1 Features 1• Latch-up performance exceeds 100 mA Per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000-V Human-body model (A114-A) – 200-V Machine model (A115-A) – 1000-V Charged-device model (C101) • Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports

文件：1.97409 Mbytes 页数：37 Pages

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德州仪器

Single 2-Input NAND Gate With Open-Drain Output

文件：1.55698 Mbytes 页数：34 Pages

TI

德州仪器

Single 2-Input NAND Gate With Open-Drain Output

文件：723.76 Kbytes 页数：19 Pages

TI

德州仪器

Single 2-Input NAND Gate With Open-Drain Output

文件：2.50818 Mbytes 页数：38 Pages

TI

德州仪器