SN74AUC1GU04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：718.22 Kbytes 页数：23 Pages

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德州仪器

SINGLE INVERTER GATE

文件：314.24 Kbytes 页数：12 Pages

TI

德州仪器

SINGLE INVERTER GATE

文件：445.97 Kbytes 页数：12 Pages

TI

德州仪器

单路 0.8V 至 2.7V 高速反相器

This single inverter gate is operational at 0.8-V to 2.7-V VCC, but is designed specifically for 1.65-V to 1.95-V VCC operation.\n\nThe SN74AUC1GU04 device contains one inverter with an unbuffered output and performs the Boolean function Y = A.\n\nNanoFree™ package technology is a major breakthrough • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II\n• 2000-V Human-Body Model (A114-A)\n• 1000-V Charged-Device Model (C101)\n• Available in the Texas Instruments NanoFree™ Package\n• Sub-1-V Operable\n• Low Power Consumption, 10-µA Max ICC \n• Unbuffered Output\n• Ioff Supports Partial P;

TI

德州仪器

SN74AUC1GU04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：718.22 Kbytes 页数：23 Pages

TI

德州仪器

丝印：UU4R；Package：SOT-23；SN74AUC1GU04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：718.22 Kbytes 页数：23 Pages

TI

德州仪器

丝印：UU4R；Package：SOT-23；SN74AUC1GU04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：718.22 Kbytes 页数：23 Pages

TI

德州仪器

SN74AUC1GU04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：718.22 Kbytes 页数：23 Pages

TI

德州仪器

丝印：UDR；Package：SC70；SN74AUC1GU04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：718.22 Kbytes 页数：23 Pages

TI

德州仪器

丝印：UDR；Package：SC70；SN74AUC1GU04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：718.22 Kbytes 页数：23 Pages

TI

德州仪器