丝印：UU4R；Package：SOT-23；DUAL INVERTER GATE

FEATURES · Available in the Texas Instruments NanoFree™ Package · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Sub-1-V Operable · Unbuffered Outputs · Max tpd of 1.9 ns at 1.8 V · Low Power Consumption, 10 mA at 1.8 V · ±8-mA Output Dri

文件：1.06511 Mbytes 页数：15 Pages

TI

德州仪器

丝印：UU4R；Package：SOT-23；SN74AUC1GU04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：718.22 Kbytes 页数：23 Pages

TI

德州仪器

丝印：UU4R；Package：SOT-23；SN74AUC1GU04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：718.22 Kbytes 页数：23 Pages

TI

德州仪器

丝印：UU4R；Package：SOT-23；DUAL INVERTER GATE

FEATURES · Available in the Texas Instruments NanoFree™ Package · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Sub-1-V Operable · Unbuffered Outputs · Max tpd of 1.9 ns at 1.8 V · Low Power Consumption, 10 mA at 1.8 V · ±8-mA Output Dri

文件：1.06511 Mbytes 页数：15 Pages

TI

德州仪器

丝印：UU4R；Package：SOT-23；DUAL INVERTER GATE

FEATURES · Available in the Texas Instruments NanoFree™ Package · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Sub-1-V Operable · Unbuffered Outputs · Max tpd of 1.9 ns at 1.8 V · Low Power Consumption, 10 mA at 1.8 V · ±8-mA Output Dri

文件：1.06511 Mbytes 页数：15 Pages

TI

德州仪器