丝印：UDR；Package：SC70；SN74AUC1GU04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：718.22 Kbytes 页数：23 Pages

TI

德州仪器

丝印：UDR；Package：SC70；SN74AUC1GU04 Single Inverter Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Oper

文件：718.22 Kbytes 页数：23 Pages

TI

德州仪器

丝印：UDR；Package：SC70；DUAL INVERTER GATE

FEATURES · Available in the Texas Instruments NanoFree™ Package · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Sub-1-V Operable · Unbuffered Outputs · Max tpd of 1.9 ns at 1.8 V · Low Power Consumption, 10 mA at 1.8 V · ±8-mA Output Dri

文件：1.06511 Mbytes 页数：15 Pages

TI

德州仪器

丝印：UDR；Package：SC70；DUAL INVERTER GATE

FEATURES · Available in the Texas Instruments NanoFree™ Package · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Sub-1-V Operable · Unbuffered Outputs · Max tpd of 1.9 ns at 1.8 V · Low Power Consumption, 10 mA at 1.8 V · ±8-mA Output Dri

文件：1.06511 Mbytes 页数：15 Pages

TI

德州仪器

500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz

[GHz-Technology] GENERAL DESCRIPTION The UDR-500 is an internally matched, COMMON EMITTER transistor capable of providing 500 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450 MHz. This hermetically solder sealed transistor is spec

文件：236.41 Kbytes 页数：3 Pages

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EmbeddedDOS micro-DriveModule

文件：883.5 Kbytes 页数：10 Pages

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