首页 >SN65C1168PWR工控元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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DUALDIFFERENTIALDRIVERSANDRECEIVERS 1FEATURES •MeetorExceedStandardsTIA/EIA-422-Band ITURecommendationV.11 •BiCMOSProcessTechnology •LowSupply-CurrentRequirements:9mAMax •LowPulseSkew •ReceiverInputImpedance...17kΩTyp •ReceiverInputSensitivity...±200mV •ReceiverCommon-ModeInputVoltage | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DUALDIFFERENTIALDRIVERSANDRECEIVERS | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
DUALDIFFERENTIALDRIVERSANDRECEIVERS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DUALDIFFERENTIALDRIVERSANDRECEIVERS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DUALDIFFERENTIALDRIVERSANDRECEIVERS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DUALDIFFERENTIALDRIVERSANDRECEIVERS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DUALDIFFERENTIALDRIVERSANDRECEIVERSWITH짹15-kVESDPROTECTION | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
SN65C1168E-SEPDualDifferentialDriversandReceiversWith짹12-kVESDProtection | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
SN65C1168E-SEPDualDifferentialDriversandReceiversWith±12-kVESDProtection 1Features •VIDV62/19606 •Radiationhardened –Singleeventlatch-up(SEL)immuneto43 MeV-cm2/mgat125°C –ELDRS-freeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto20krad(Si) •SpaceEnhancedPlastic –Controlledbaseline –Goldwire –NiPdAuleadfini | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
SN65C1168E-SEPDualDifferentialDriversandReceiversWith±12-kVESDProtection 1Features •VIDV62/19606 •Radiationhardened –Singleeventlatch-up(SEL)immuneto43 MeV-cm2/mgat125°C –ELDRS-freeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto20krad(Si) •SpaceEnhancedPlastic –Controlledbaseline –Goldwire –NiPdAuleadfini | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 |
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