OCTAL GENERAL-PURPOSE INTERFACE BUS TRANSCEIVERS

Suitable for IEEE Standard 488-1978 (GPIB) 8-Channel Bidirectional Transceivers Designed to Implement Control Bus Interface Designed for Single Controller High-Speed Advanced Low-Power Schottky Circuitry Low Power Dissipation . . . 46 mW Max Per Channel Fast Propagation Times . . . 20 ns

文件：717.2 Kbytes 页数：23 Pages

TI

德州仪器

QUADRUPLE DIFFERENTIAL LINE RECEIVERS

Meet or Exceed the Requirements of ANSI Standards EIA/TIA-422-B and EIA/TIA-423-A Meet ITU Recommendations V.10 and V.11 Designed to Operate Up to 20 Mbaud –7 V to 7 V Common-Mode Input Voltage Range With 200-mV Sensitivity 3-State TTL-Compatible Outputs High Input Impedance . . . 12 kW Min

文件：334.99 Kbytes 页数：15 Pages

TI

德州仪器

SN55HVD233-SP 3.3-V Radiation Hardened CAN Transceiver

1 Features 1• QMLV (QML Class V) Radiation Hardness Assured (RHA) MIL-PRF 38535 Qualified, SMD 5962L1420901VXC – Single Event Latch-up (SEL) Immune to 86 MeV-cm2/mg at 125°C – Total Ionizing Dose (TID) immune up 50 kRad (Si) at Low Dose Rate – Qualified over the Military Temperature Range

文件：662.39 Kbytes 页数：34 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

SN55HVD233-SP 3.3-V Radiation Hardened CAN Transceiver

1 Features 1• QMLV (QML Class V) Radiation Hardness Assured (RHA) MIL-PRF 38535 Qualified, SMD 5962L1420901VXC – Single Event Latch-up (SEL) Immune to 86 MeV-cm2/mg at 125°C – Total Ionizing Dose (TID) immune up 50 kRad (Si) at Low Dose Rate – Qualified over the Military Temperature Range

文件：662.39 Kbytes 页数：34 Pages

TI

德州仪器

SN55HVD233-SP 3.3-V Radiation Hardened CAN Transceiver

1 Features 1• QMLV (QML Class V) Radiation Hardness Assured (RHA) MIL-PRF 38535 Qualified, SMD 5962L1420901VXC – Single Event Latch-up (SEL) Immune to 86 MeV-cm2/mg at 125°C – Total Ionizing Dose (TID) immune up 50 kRad (Si) at Low Dose Rate – Qualified over the Military Temperature Range

文件：662.39 Kbytes 页数：34 Pages

TI

德州仪器