SN11030

USB to CF/ATA/SM/Flash Interface Controller, Mass Storage Class Compliant

GeneralDescription SN11030isahigh-performanceintegratedcircuittobridgeUSBandCF/ATA/SM/Flashcompliancedevices.ItprovidesaflexibleandcostefficientsinglechipsolutionforexternalstorageapplicationsthatintendtoutilizetheconvenienceofUSB.Tohelpthesystemmanufacture

11030

PVCandNylonLEDSpacers

IJ11030H

EMI/EMCFILTER

Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo

IJ11030S

EMI/EMCFILTER

Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo

MJ11030

High-CurrentComplementarySiliconPowerTransistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P

MJ11030

POWERTRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MJ11030

50AMPERECOMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS60.120VOLTS300WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) •

MJ11030

COMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS

High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A

MJ11030

COMPLEMENTARYDARLINGTONPOWERTRANSISTOR

FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

MJ11030

High?묬urrentComplementarySiliconPowerTransistors

MJ11030

iscSiliconNPNDarlingtonPowerTransistor

MJ11030

High-CurrentComplementarySiliconPowerTransistors

MJ11030G

High-CurrentComplementarySiliconPowerTransistors

MJ11030G

High?묬urrentComplementarySiliconPowerTransistors

PS11030

PatchLead-CAT5E

PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest