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TW2106

TW2106/TW2108EmbeddedPrecisionGPSL1Antenna

TALLYSMAN

Tallysman Wireless Inc.

UM2106

ATTENUATORANDPOWERPINDIODES2??30MHz

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2106

PINDIODE

DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2106B

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UM2106D

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UPG2106

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES •LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@

CEL

California Eastern Labs

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPG2106TB

GaAsINTEGRATEDCIRCUITS

FEATURES •Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz •Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) •Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm •

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

VN2106

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

详细参数

  • 型号:

    SMV2106

  • 制造商:

    KNOX

  • 制造商全称:

    KNOX

  • 功能描述:

    PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES

供应商型号品牌批号封装库存备注价格
10
优势库存,全新原装
询价
M/A-COM
24+
36000
原装现货假一赔十
询价
ALPHAINDUST
24+
原装进口原厂原包接受订货
72000
原装现货假一罚十
询价
SOD-423
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
SKYWORKS/思佳讯
23+
SOD-423
50000
全新原装正品现货,支持订货
询价
SKY
24+
SMD
2600
原装现货假一赔十
询价
ALPHA
23+
SC79
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
ALPHA
00+
SOD-323
48000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SKYWORK
25+
SMD
10000
全新原装现货库存
询价
ALPHA
23+
SOD-323
50500
原厂原装正品
询价
更多SMV2106供应商 更新时间2025-7-21 10:00:00