PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES

PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES DC Power Dissipation @ Ta = 25°C 250 mW Reverse Breakdown Voltage @ 10µA 30 V Min Max Reverse Current (IR) @ Ta = 25° C 0.1 µA @ 25 Vdc Operating Temperature (Topr) -55 to + 125° C Storage T

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KNOX

Silicon Abrupt Tuning Varactors

MACOM’S abrupt tuning varactors provide extremely high Q and low series resistance available in a 30 volt Silicon diode. These devices are available in single junction, common anode and common cathode configurations. Consult factory for availability. ·Available in Tape and Reel\n·Wide Selection of Capacitance Ranges\n·High Q\n·Small and High Volume Commercial Applications;

MACOM

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

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SUTEX

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

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NEC

瑞萨

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

文件：87.38 Kbytes 页数：12 Pages

NEC

瑞萨