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TN2106

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

文件:32.189 Kbytes 页数:4 Pages

SUTEX

TN2106

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes 页数:6 Pages

SUTEX

TN2106

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes 页数:6 Pages

SUTEX

TN2106

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes 页数:14 Pages

Microchip

微芯科技

TN2106

MOSFET, N-Channel Enhancement-Mode, 60V, 2.5 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

Microchip

微芯科技

TN2106K1

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

文件:32.189 Kbytes 页数:4 Pages

SUTEX

TN2106N3

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

文件:32.189 Kbytes 页数:4 Pages

SUTEX

TN2106ND

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

文件:32.189 Kbytes 页数:4 Pages

SUTEX

TN2106_03

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes 页数:4 Pages

SUTEX

TN2106K1

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes 页数:4 Pages

SUTEX

技术参数

  • BVdss min (V):

    60

  • Rds (on) max (Ohms):

    2.5

  • CISSmax (pF):

    50

  • Vgs(th) max (V):

    2.0

  • Packages:

    3\\SOT-233\\TO-92

供应商型号品牌批号封装库存备注价格
Supertex
19+
SOT-23
200000
询价
Supertex
20+
SOT-23
36800
原装优势主营型号-可开原型号增税票
询价
Supertex
24+
SOT-23
39000
原装现货假一赔十
询价
Supertex
SOT-23
39000
一级代理 原装正品假一罚十价格优势长期供货
询价
Supertex
2025+
SOT-23
7695
全新原厂原装产品、公司现货销售
询价
Supertex
24+
SOT-23
18800
绝对原装进口现货 假一赔十 价格优势!
询价
Supertexinc
24+
SOT-23
6200
新进库存/原装
询价
MICROCHIP
23+
SOT-23
60000
原装正品,假一罚十
询价
Supertex
25+
SOT-23
4897
绝对原装!现货热卖!
询价
SUPERTEX
24+
TO-92
5810
只做原装正品
询价
更多TN2106供应商 更新时间2025-10-5 15:14:00