型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
TN2106 | N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped 文件:32.189 Kbytes 页数:4 Pages | SUTEX | SUTEX | |
TN2106 | N-Channel Enhancement-Mode Vertical DMOS FET 文件:550.85 Kbytes 页数:6 Pages | SUTEX | SUTEX | |
TN2106 | N-Channel Enhancement-Mode Vertical DMOS FET 文件:550.85 Kbytes 页数:6 Pages | SUTEX | SUTEX | |
TN2106 | N-Channel Enhancement-Mode Vertical DMOS FET 文件:822.75 Kbytes 页数:14 Pages | Microchip 微芯科技 | Microchip | |
TN2106 | MOSFET, N-Channel Enhancement-Mode, 60V, 2.5 Ohm This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain; | Microchip 微芯科技 | Microchip | |
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped 文件:32.189 Kbytes 页数:4 Pages | SUTEX | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped 文件:32.189 Kbytes 页数:4 Pages | SUTEX | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped 文件:32.189 Kbytes 页数:4 Pages | SUTEX | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件:45.67 Kbytes 页数:4 Pages | SUTEX | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件:45.67 Kbytes 页数:4 Pages | SUTEX | SUTEX |
技术参数
- BVdss min (V):
60
- Rds (on) max (Ohms):
2.5
- CISSmax (pF):
50
- Vgs(th) max (V):
2.0
- Packages:
3\\SOT-233\\TO-92
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Supertex |
19+ |
SOT-23 |
200000 |
询价 | |||
Supertex |
20+ |
SOT-23 |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Supertex |
24+ |
SOT-23 |
39000 |
原装现货假一赔十 |
询价 | ||
Supertex |
SOT-23 |
39000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Supertex |
2025+ |
SOT-23 |
7695 |
全新原厂原装产品、公司现货销售 |
询价 | ||
Supertex |
24+ |
SOT-23 |
18800 |
绝对原装进口现货 假一赔十 价格优势! |
询价 | ||
Supertexinc |
24+ |
SOT-23 |
6200 |
新进库存/原装 |
询价 | ||
MICROCHIP |
23+ |
SOT-23 |
60000 |
原装正品,假一罚十 |
询价 | ||
Supertex |
25+ |
SOT-23 |
4897 |
绝对原装!现货热卖! |
询价 | ||
SUPERTEX |
24+ |
TO-92 |
5810 |
只做原装正品 |
询价 |
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