零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
ReferenceDesign | ZoranZoran Corporation 卓然美国卓然股份有限公司 | Zoran | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/FisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structuremiddle/low-voltageVDMOStechnology.Theimprovedplanar stripecellandtheimprovedguardringterminalhavebeenespecially tailore | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/FisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structuremiddle/low-voltageVDMOStechnology.Theimprovedplanar stripecellandtheimprovedguardringterminalhavebeenespecially tailore | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/FisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structuremiddle/low-voltageVDMOStechnology.Theimprovedplanar stripecellandtheimprovedguardringterminalhavebeenespecially tailore | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structureVDMOStechnology.Theimprovedprocessandcellstructure havebeenespeciallytailoredtominimizeon-stateresistance,provide super | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structureVDMOStechnology.Theimprovedprocessandcellstructure havebeenespeciallytailoredtominimizeon-stateresistance,provide super | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
18A,200VN-CHANNELMOSFET GENERALDESCRIPTION SVD640T/D/FisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryS-RinTM structuremiddle/low-voltageVDMOStechnology.Theimprovedplanar stripecellandtheimprovedguardringterminalhavebeenespecially tailore | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelMOSFET [SEMIPOWER] GeneralDescription ThispowerMOSFETisproducedinSAMWINwithadvancedVDMOSprocess,planarstripe.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristic | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
GeneralBattery | SUNNYWAYShenzhen Sunnyway Battery Tech Co.Ltd. 三威电源深圳市三威电源科技有限公司 | SUNNYWAY |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAYMAS |
25+23+ |
SOD-123FL |
51922 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
PANJIT |
23+ |
SOD123FL |
63000 |
原装正品现货 |
询价 | ||
PANJIT |
19+ |
SOD-123F |
200000 |
SOD-123F直脚封装 |
询价 | ||
PANJIT |
20+ |
SOD-123F |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
VISHAY/威世 |
21+ |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | |||
LITTELFUSE |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
JINGDAO/晶导微 |
23+ |
SOD-123FL |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
PANJIT |
24+ |
SOD-123F |
135000 |
原装现货假一赔十 |
询价 | ||
力特/littelfuse |
2021+ |
SOD-123FL |
15000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
PANJIT |
SOD-123F |
135000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |