SVD640D中文资料士兰微数据手册PDF规格书

GENERAL DESCRIPTION

SVD640T/D/F is an N-channel enhancement mode power MOS field

effect transistor which is produced using Silan proprietary S-RinTM

structure middle/low-voltage VDMOS technology. The improved planar

stripe cell and the improved guard ring terminal have been especially

tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche and

commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

 18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V

 Low gate charge

 Low Crss

 Fast switching

 Improved dv/dt capability