SMCG6060资料datasheet下载供应价格第3页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CED6060R	文件：42.08 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP6060	文件：510.01 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP6060L	文件：516.75 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,50A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP6060L	文件：544.55 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,52.4A,RDS(ON)=21mW@VGS=10V. RDS(ON)=25mW@VGS=5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP6060LR	文件：534.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●60V,60A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP6060N	文件：426.55 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,42A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP6060N	文件：624.91 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,42A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP6060R	文件：527.84 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP6060R	文件：81.68 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU6060L	文件：785.85 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,48A,RDS(ON)=24mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=29mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU6060N	文件：623.04 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,34A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. TO-251&TO-252package.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU6060N	文件：425.79 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU6060N	文件：900.27 Kbytes Page：6 Pages	N-Channel60-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
CEU6060R	文件：42.08 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CHM6060RPAPT	文件：201.52 Kbytes Page：2 Pages	N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT30Ampere FEATURE Smallpackage.(TO-252A) SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. APPLICATION Servomotorcontrol. PowerMOSFETgatedrivers. Otherswitchingapplications.	CHENMKOCHENMKO CHENMKO	CHENMKO
DTP6060	文件：1.68086 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
DUR6060W	文件：638.35 Kbytes Page：3 Pages	Ultra-fastswitching	LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司	Littelfuse
EL6060	文件：177.55 Kbytes Page：2 Pages	230VIP20595x59523W/33WCCTAdjustableTrofferPanel DESCRIPTION230VIP20595x59523W/33WCCTAdjustableTrofferPanel	KNIGHTSBRIDGE ML Accessories Limited. All rights reserved.	KNIGHTSBRIDGE
EL6060EM	文件：179.51 Kbytes Page：2 Pages	230VIP20595x59523W/33WCCTAdjustableTrofferPanelSTEmergency DESCRIPTION 230VIP20595x59523W/33WCCTAdjustableTrofferPanelST Emergency	KNIGHTSBRIDGE ML Accessories Limited. All rights reserved.	KNIGHTSBRIDGE
FBR6060	文件：143.47 Kbytes Page：2 Pages	60AmpHighVoltageSCHOTTKYBARRIERRECTIFIERSMechanicalDimensions Features ■HIGHCURRENTCAPABILITY WITHLOWVF ■HIGHEFFICIENCYw/LOWPOWERLOSS ■HIGHSURGEVOLTAGEAND TRANSIENTPROTECTION ■MEETSULSPECIFICATION94V-0	FCI Amphenol ICC	FCI

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详细参数

型号：
SMCG6060
制造商：
Microsemi Corporation
功能描述：
TVS SGL BI-DIR 60V 1.5KW 2PIN DO-215AB - Bulk

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市艾宇欣科技有限公司	SMCG6060A/TR13	Microsemi	1942+	N/A	908	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市惊羽科技有限公司	SMCG6060A/TR13	MICROCHIP-微芯	24+25+/26+27+	DO-215	9328	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价

更多SMCG6060供应商更新时间2024-6-7 10:18:00

详细参数

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