零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SMCG6042A | 5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors DESCRIPTION: TheseTransientVoltageSuppressordevicesareaseriesofBi-directionalSiliconTransientSuppressorsusedinACapplicationswherelargevoltagetransientscanpermanentlydamagevoltage-sensitivecomponents. FEATURES: ●BIDIRECTIONAL ●1500WATTSPEAKPOWER ●VOLTAGERANGEFR | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
包装:卷带(TR) 封装/外壳:DO-215AB,SMC 鸥翼 类别:电路保护 TVS - 二极管 描述:TVS DIODE 11VWM 18.2VC DO215AB | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
包装:卷带(TR) 封装/外壳:DO-215AB,SMC 鸥翼 类别:电路保护 TVS - 二极管 描述:TVS DIODE 11VWM 18.2VC DO215AB | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SINGLEPOLE,SINGLETHROWCONNECTORIZEDSWITCHES | MICRONETICSMicronetics, Inc. Micronetics, Inc. | MICRONETICS | ||
ExtraLargeAlligatorClipWith4mmSheathSafetyJack | POMONA Pomona Electronics | POMONA | ||
Component112X1PAIR | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE | ||
SiliconMonolithicIntegratedCircuit | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
OPERATIONINSTRUCTION | COREBAICoreBai Microelectronics 芯佰芯佰微电子(北京)有限公司 | COREBAI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,118A,RDS(ON)=5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,118A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,90A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,118A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,118A,RDS(ON)=5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelMOSFETusesadvancedSGTtechnology Description: ThisN-ChannelMOSFETusesadvancedSGTtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features: 1)VDS=60V,ID=130A,RDS(ON) | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,90A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
13-16GHzHighPowerAmplifier Description TheCHA6042isafour-stagepHEMTHPAMMICdesignedforVSATgroundterminalsandotherradioapplications.TheCHA6042provides32dBmnominaloutputpowerat1dBgaincompressionoverthe13-16GHzfrequencyrange,and32dBsmall-signalgain.Thisproductwillbeavailableinchipf | UMSUnited Monolithic Semiconductors United Monolithic Semiconductors | UMS | ||
60V175째CN-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60V175째CN-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60V175째CN-CHANNELENHANCEMENTMODEMOSFETPOWERDI | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60V175°CN-CHANNELENHANCEMENTMODEMOSFETPOWERDI Features Ratedto+175°C–IdealforHighAmbientTemperature Environments 100UnclampedInductiveSwitching–EnsuresMoreReliable andRobustEndApplication LowRDS(ON)–MinimizesPowerLosses LowQg–MinimizesSwitchingLosses Lead-FreeFinish;RoHSCompliant(Notes1&2) Halogenan | DIODESDiodes Incorporated 达尔科技 | DIODES |
详细参数
- 型号:
SMCG6042A
- 制造商:
Microsemi Corporation
- 功能描述:
TVS SGL BI-DIR 11V 1.5KW 2PIN DO-215AB - Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
MICROCHIP-微芯 |
24+25+/26+27+ |
DO-215 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
相关规格书
更多- SMCG6042A/TR13
- SMCG6042E3/TR13
- SMCG6043/TR13
- SMCG6043A/TR13
- SMCG6043E3/TR13
- SMCG6044A
- SMCG6044AE3/TR13
- SMCG6045
- SMCG6045A
- SMCG6045AE3/TR13
- SMCG6046
- SMCG6046A
- SMCG6046AE3/TR13
- SMCG6047
- SMCG6047A
- SMCG6047AE3/TR13
- SMCG6048
- SMCG6048A/TR13
- SMCG6048E3/TR13
- SMCG6049/TR13
- SMCG6049A/TR13
- SMCG6049E3/TR13
- SMCG6050A
- SMCG6050AE3/TR13
- SMCG6051
- SMCG6051A
- SMCG6051AE3/TR13
- SMCG6052
- SMCG6052A/TR13
- SMCG6052E3/TR13
- SMCG6053/TR13
- SMCG6053A/TR13
- SMCG6053E3/TR13
- SMCG6054/TR13
- SMCG6054A/TR13
- SMCG6055
- SMCG6055A
- SMCG6055AE3/TR13
- SMCG6056
- SMCG6056A
- SMCG6056AE3/TR13
- SMCG6057
- SMCG6057A/TR13
- SMCG6057E3/TR13
- SMCG6058/TR13
相关库存
更多- SMCG6042AE3/TR13
- SMCG6043
- SMCG6043A
- SMCG6043AE3/TR13
- SMCG6044
- SMCG6044A/TR13
- SMCG6044E3/TR13
- SMCG6045/TR13
- SMCG6045A/TR13
- SMCG6045E3/TR13
- SMCG6046/TR13
- SMCG6046A/TR13
- SMCG6046E3/TR13
- SMCG6047/TR13
- SMCG6047A/TR13
- SMCG6047E3/TR13
- SMCG6048A
- SMCG6048AE3/TR13
- SMCG6049
- SMCG6049A
- SMCG6049AE3/TR13
- SMCG6050
- SMCG6050A/TR13
- SMCG6050E3/TR13
- SMCG6051/TR13
- SMCG6051A/TR13
- SMCG6051E3/TR13
- SMCG6052A
- SMCG6052AE3/TR13
- SMCG6053
- SMCG6053A
- SMCG6053AE3/TR13
- SMCG6054
- SMCG6054A
- SMCG6054AE3/TR13
- SMCG6055/TR13
- SMCG6055A/TR13
- SMCG6055E3/TR13
- SMCG6056/TR13
- SMCG6056A/TR13
- SMCG6056E3/TR13
- SMCG6057A
- SMCG6057AE3/TR13
- SMCG6058
- SMCG6058A