零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SMCG6056 | 5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors DESCRIPTION: TheseTransientVoltageSuppressordevicesareaseriesofBi-directionalSiliconTransientSuppressorsusedinACapplicationswherelargevoltagetransientscanpermanentlydamagevoltage-sensitivecomponents. FEATURES: ●BIDIRECTIONAL ●1500WATTSPEAKPOWER ●VOLTAGERANGEFR | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors DESCRIPTION: TheseTransientVoltageSuppressordevicesareaseriesofBi-directionalSiliconTransientSuppressorsusedinACapplicationswherelargevoltagetransientscanpermanentlydamagevoltage-sensitivecomponents. FEATURES: ●BIDIRECTIONAL ●1500WATTSPEAKPOWER ●VOLTAGERANGEFR | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
包装:卷带(TR) 封装/外壳:DO-215AB,SMC 鸥翼 类别:电路保护 TVS - 二极管 描述:TVS DIODE 43VWM 70.1VC DO215AB | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
包装:卷带(TR) 封装/外壳:DO-215AB,SMC 鸥翼 类别:电路保护 TVS - 二极管 描述:TVS DIODE 43VWM 70.1VC DO215AB | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
包装:卷带(TR) 封装/外壳:DO-215AB,SMC 鸥翼 类别:电路保护 TVS - 二极管 描述:TVS DIODE 41VWM 73.5VC DO215AB | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SINGLEPOLE,THREETHROWCONNECTORIZEDSWITCHES | MICRONETICSMicronetics, Inc. Micronetics, Inc. | MICRONETICS | ||
TESTJACKS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
Teck901000V,3GC#68StrBC,XLPEInsM4,PVCJkt,SIAArmor,BlkPVCJkt,CSAHLSUNRES-40C ProductDescription Teck901000V,3+GConductor6+8AWG(7x14H)BareCopper,XLPEInsulationM4ColorCode,PVCInnerJacket,SteelInterlockArmor,BlackPVCOuter Jacket,CSAHLSUNRES-40C | BELDEN Belden Inc. | BELDEN | ||
Component16X1PAIR | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE | ||
PowermanagementLSIformobilephone | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
12SP207/28TCPEPVCComputerCable | GENERALGeneral Electric 通用电气公司美国通用电气公司 | GENERAL | ||
Automatedprobemanufacturingenableslowcostandshortleadtime | IRONWOODIronwood Electronics. Lronwood电子公司 | IRONWOOD | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,15A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,15A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET |
详细参数
- 型号:
SMCG6056
- 制造商:
Microsemi Corporation
- 功能描述:
TVS SGL BI-DIR 41V 1.5KW 2PIN DO-215AB - Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
MICROCHIP-微芯 |
24+25+/26+27+ |
DO-215 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
相关规格书
更多- SMCG6056/TR13
- SMCG6056A/TR13
- SMCG6056E3/TR13
- SMCG6057A
- SMCG6057AE3/TR13
- SMCG6058
- SMCG6058A
- SMCG6058AE3/TR13
- SMCG6059
- SMCG6059A
- SMCG6059AE3/TR13
- SMCG6060/TR13
- SMCG6060A/TR13
- SMCG6060E3/TR13
- SMCG6061/TR13
- SMCG6061A/TR13
- SMCG6061E3/TR13
- SMCG6062/TR13
- SMCG6062A/TR13
- SMCG6063
- SMCG6063A
- SMCG6063AE3/TR13
- SMCG6064
- SMCG6064A
- SMCG6064AE3/TR13
- SMCG6065
- SMCG6065A/TR13
- SMCG6065E3/TR13
- SMCG6066/TR13
- SMCG6066A/TR13
- SMCG6066E3/TR13
- SMCG6067/TR13
- SMCG6067A/TR13
- SMCG6067E3/TR13
- SMCG6068/TR13
- SMCG6068A/TR13
- SMCG6069
- SMCG6069A
- SMCG6069AE3/TR13
- SMCG6070
- SMCG6070A
- SMCG6070AE3/TR13
- SMCG6071
- SMCG6071A/TR13
- SMCG6071E3/TR13
相关库存
更多- SMCG6056A
- SMCG6056AE3/TR13
- SMCG6057
- SMCG6057A/TR13
- SMCG6057E3/TR13
- SMCG6058/TR13
- SMCG6058A/TR13
- SMCG6058E3/TR13
- SMCG6059/TR13
- SMCG6059A/TR13
- SMCG6060
- SMCG6060A
- SMCG6060AE3/TR13
- SMCG6061
- SMCG6061A
- SMCG6061AE3/TR13
- SMCG6062
- SMCG6062A
- SMCG6062AE3/TR13
- SMCG6063/TR13
- SMCG6063A/TR13
- SMCG6063E3/TR13
- SMCG6064/TR13
- SMCG6064A/TR13
- SMCG6064E3/TR13
- SMCG6065A
- SMCG6065AE3/TR13
- SMCG6066
- SMCG6066A
- SMCG6066AE3/TR13
- SMCG6067
- SMCG6067A
- SMCG6067AE3/TR13
- SMCG6068
- SMCG6068A
- SMCG6068AE3/TR13
- SMCG6069/TR13
- SMCG6069A/TR13
- SMCG6069E3/TR13
- SMCG6070/TR13
- SMCG6070A/TR13
- SMCG6070E3/TR13
- SMCG6071A
- SMCG6071AE3/TR13
- SMCG6072