SMCG6056A技术资料参数库存现货美高森美-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
SMCG6056A	文件：257.86 Kbytes Page：4 Pages	5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors DESCRIPTION: TheseTransientVoltageSuppressordevicesareaseriesofBi-directionalSiliconTransientSuppressorsusedinACapplicationswherelargevoltagetransientscanpermanentlydamagevoltage-sensitivecomponents. FEATURES: ●BIDIRECTIONAL ●1500WATTSPEAKPOWER ●VOLTAGERANGEFR	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
SMCG6056A/TR13	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：DO-215AB，SMC 鸥翼类别：电路保护 TVS - 二极管描述：TVS DIODE 43VWM 70.1VC DO215AB	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
SMCG6056AE3/TR13	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：DO-215AB，SMC 鸥翼类别：电路保护 TVS - 二极管描述：TVS DIODE 43VWM 70.1VC DO215AB	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
6056	文件：39.74 Kbytes Page：1 Pages	SINGLEPOLE,THREETHROWCONNECTORIZEDSWITCHES	MICRONETICSMicronetics, Inc. Micronetics, Inc.	MICRONETICS
6056	文件：401.4 Kbytes Page：1 Pages	TESTJACKS	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
6056	文件：140.34 Kbytes Page：2 Pages	Teck901000V,3GC#68StrBC,XLPEInsM4,PVCJkt,SIAArmor,BlkPVCJkt,CSAHLSUNRES-40C ProductDescription Teck901000V,3+GConductor6+8AWG(7x14H)BareCopper,XLPEInsulationM4ColorCode,PVCInnerJacket,SteelInterlockArmor,BlackPVCOuter Jacket,CSAHLSUNRES-40C	BELDEN Belden Inc.	BELDEN
6056C	文件：76.63 Kbytes Page：2 Pages	Component16X1PAIR	ALPHAWIREAlpha Wire 阿尔法电线	ALPHAWIRE
BH6056GU	文件：354.14 Kbytes Page：6 Pages	PowermanagementLSIformobilephone	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM
C6056A	文件：74.91 Kbytes Page：1 Pages	12SP207/28TCPEPVCComputerCable	GENERALGeneral Electric 通用电气公司美国通用电气公司	GENERAL
CBT-BGA-6056	文件：427.27 Kbytes Page：5 Pages	Automatedprobemanufacturingenableslowcostandshortleadtime	IRONWOODIronwood Electronics. Lronwood电子公司	IRONWOOD
CEB6056	文件：401.17 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB6056	文件：473.04 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB6056L	文件：653.29 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED6056	文件：468.3 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED6056	文件：356.33 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED6056L	文件：647.37 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEM6056	文件：497.16 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,15A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEM6056	文件：423.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,15A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEM6056L	文件：653.83 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,14.5A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP6056	文件：473.04 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

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详细参数

型号：
SMCG6056A
制造商：
Microsemi Corporation
功能描述：
TVS SGL BI-DIR 43V 1.5KW 2PIN DO-215AB - Bulk

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市艾宇欣科技有限公司	SMCG6056A/TR13	Microsemi	1942+	N/A	908	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市惊羽科技有限公司	SMCG6056A/TR13	MICROCHIP-微芯	24+25+/26+27+	DO-215	9328	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价

更多SMCG6056A供应商更新时间2024-5-24 10:18:00

详细参数

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