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SML-LXR2713SIUPUSB

0.5mmX2.2mmPCBRightAngleSurfaceMountLed

Lumex

LUMEX INC.

SPLA2713B

Pushbuttonswitch,sideactuation,illumination

APEX-ELECTRONICS

Apex Electronics Co., Ltd

SPNA2713B

Pushbuttonswitch,sideactuation,illumination

APEX-ELECTRONICS

Apex Electronics Co., Ltd

TZ2713A

CrystalUnitSMD2.5x2.026.859MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

UPA2713GR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2713GRisP-channelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=16mΩMAX.(VGS=−10V,ID=−4.0A) RDS(on)2=25mΩMAX.(VGS=−4.5V,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPA2713GR

SWITCHINGP-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC2713T

1.5GHzSILICONMMICWIDE-BANDAMPLIFIER

DESCRIPTION TheµPC2710TBisasiliconmonolithicintegratedcircuitdesignedasPAdriverfor900MHzbandcellulatelephonetuners.ThisICispackagedinsuperminimoldpackagewhichissmallerthanconventionalminimold. ThisICismanufacturedusingNEC’s20GHzfTNESATTMlllsiliconb

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC2713T

1.2GHzLOWNOISEWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

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