丝印：SM72445MT；Package：TSSOP；SM72445 Programmable Maximum Power Point Tracking Controller With Adjustable PWM Frequency

1FEATURES 2• Renewable Energy Grade • 110kHz,135kHz or 215kHz PWM Operating Frequency • Panel Mode Pin for Optional Bypass Switch Control • Programmable Maximum Power Point Tracking • Photovoltaic Solar Panel Voltage and Current Diagnostic • Single Inductor Four Switch Buck-Boost Convert

文件：374.46 Kbytes 页数：22 Pages

TI

德州仪器

丝印：SM72445MT；Package：TSSOP；SM72445 Programmable Maximum Power Point Tracking Controller With Adjustable PWM Frequency

1FEATURES 2• Renewable Energy Grade • 110kHz,135kHz or 215kHz PWM Operating Frequency • Panel Mode Pin for Optional Bypass Switch Control • Programmable Maximum Power Point Tracking • Photovoltaic Solar Panel Voltage and Current Diagnostic • Single Inductor Four Switch Buck-Boost Convert

文件：374.46 Kbytes 页数：22 Pages

TI

德州仪器

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES · Plastic package has Underwriters Laboratory Flammability Classification 94V-O · For surfacemounted applications · Glass passivated junction · Lowinductance surge resistance · Fast response time:typical less than 1.0ps from 0 voltstoV(BR) for unidirectional AND 5.0ns for bidir

文件：67.78 Kbytes 页数：4 Pages

MIC

昌福电子

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES · Plastic package has Underwriters Laboratory Flammability Classification 94V-O · For surfacemounted applications · Glass passivated junction · Lowinductance surge resistance · Fast response time:typical less than 1.0ps from 0 voltstoV(BR) for unidirectional AND 5.0ns for bidir

文件：67.78 Kbytes 页数：4 Pages

MIC

昌福电子

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances, r

文件：36.84 Kbytes 页数：2 Pages

Polyfet

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 125.0 Watts Single Ended Package Style AM HIGH EFFICI

文件：37.13 Kbytes 页数：2 Pages

Polyfet

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150.0 Watts Single Ended Package Style AM HIGH EFFICI

文件：36.69 Kbytes 页数：2 Pages

Polyfet

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

文件：37.3 Kbytes 页数：2 Pages

Polyfet

600W Asymmetrical TVS Diode Array

Description The SM712 TVS Diode Array is designed to protect RS-485 applications with asymmetrical working voltages (-7V to 12V) from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. The SM712 can absorb repetitive ESD strikes above the

文件：1.14506 Mbytes 页数：5 Pages

Littelfuse

力特

TRANSIENT VOLTAGE SUPPRESSORS ARRAYFOR ESD PROTECTION

Features ● 400 Watts Peak Pulse Power per Line (tp=8/20 μs) ● Protects two +12V to -7V lines ● Low clamping voltage

文件：492.87 Kbytes 页数：2 Pages

SUNMATE

森美特