SM/1xx Series - Riedon™ Precision Axial Wirewound Resistors by Bourns

Features n Formerly a Riedon™ product n Resistances to 5 MΩ n Resistance tolerances to ±0.005 % n Non-inductive Multi-Pi cores n TCR to ±2 PPM/°C n 100 % acceptance tested / traceable to NIST n Long term stability / 100 ppm/year n Matched resistance sets to ±0.001 % and ±0.5 p

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BOURNS

伯恩斯

The Littelfuse SM7 is a plastic-encapsulated surface mount MOV in a PPS material molded package with tin-plated terminal which is fully qualified in lead free

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LITTELFUSE

力特

Ceramic Surface Mount Crystal

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VANLONG

Creamic Surface Mount Crystal

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VANLONG

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES · Plastic package has Underwriters Laboratory Flammability Classification 94V-O · For surfacemounted applications · Glass passivated junction · Lowinductance surge resistance · Fast response time:typical less than 1.0ps from 0 voltstoV(BR) for unidirectional AND 5.0ns for bidir

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MIC

昌福电子

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES · Plastic package has Underwriters Laboratory Flammability Classification 94V-O · For surfacemounted applications · Glass passivated junction · Lowinductance surge resistance · Fast response time:typical less than 1.0ps from 0 voltstoV(BR) for unidirectional AND 5.0ns for bidir

文件：67.78 Kbytes 页数：4 Pages

MIC

昌福电子

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances, r

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POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 125.0 Watts Single Ended Package Style AM HIGH EFFICI

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POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150.0 Watts Single Ended Package Style AM HIGH EFFICI

文件：36.69 Kbytes 页数：2 Pages

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

文件：37.3 Kbytes 页数：2 Pages

POLYFET