SKY77731中文资料Power Amplifier Module for WCDMA / LTE Band 11 (1427.9–1447.9 MHz) and Band 21 (1447.9–1462.9 MHz)数据手册Skyworks规格书

描述 Description

Please note: SKY77731-11 is being discontinued and is not recommended for new designs.

The SKY77731 Power Amplifier Module (PAM) is a fully matched 10-pad surface mount module developed for Wideband Code Division Multiple Access (WCDMA) and Long Term Evolution (LTE) applications. This small and efficient module packs full coverage of WCDMA / LTE Bands 11 and 21 into a single compact package. Because of high efficiencies attained throughout the entire power range, the SKY77731 delivers unsurpassed talk-time advantages. The SKY77731 meets the stringent spectral linearity requirements of High Speed Downlink Packet Access (HSDPA), High Speed Uplink Packet Access (HSUPA), and Long Term Evolution (LTE) data transmission with high power added efficiency. An integrated directional coupler eliminates the need for any external coupler.

The Gallium Arsenide (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all amplifier active circuitry, including input and interstage matching circuits. The silicon CMOS support die, providing precision biasing for the MMIC affords a true CMOS-compatible control interface. Output match into a 50-ohm load, realized off-chip within the module package, optimizes efficiency and power performance.

The SKY77731 is manufactured with Skyworks' InGaP GaAs Heterojunction Bipolar Transistor (HBT) process which provides for all positive voltage DC supply operation and maintains high efficiency and good linearity. While primary bias to the SKY77731 can be supplied directly from any suitable battery with an output of 3.2 V to 4.2 V, optimal performance is obtained with VCC2 sourced from a DC/DC power supply adjusted within 0.5 V to 3.4 V based on target output power levels. Power down executes by setting VENABLE to zero volts. No external supply side switch is needed as typical \"off\" leakage is a few microamperes with full primary voltage supplied from the battery.

特性 Features

• Low voltage positive bias supply 3.2 V to 4.2 V
• High efficiency: 44% to 28.5 dBm
• Small, low profile package: 3 mm x 3 mm x 0.9 mm, 10-pad configuration
• InGaP
• Digital Enable
• CMOS compatible control signals (GPIO)
• Internal blocking caps: RF I/O ports

应用 Application

• Smartphones
• 4G LTE