Half controlled bridge rectifier IGBT braking chopper

Features • One screw mounting hole • Fully compatible with SEMITOP® 1,2,3 • Improved thermal performances by aluminium oxide substrate • Trench IGBT brake chopper technology • CAL technology free-wheeling diode chopper

文件：306.91 Kbytes 页数：2 Pages

SEMIKRON

赛米控丹佛斯

IGBT module

Features • One screw mounting module • Solder free mounting with Press-Fit terminals • Fully compatible with SEMITOP® 2 and 3 Press-Fit • Improved thermal performances by aluminum oxide substrate • Trench4 IGBT technology • CAL4F diode technology • Integrated PTC temperature sensor • UL

文件：238.21 Kbytes 页数：4 Pages

SEMIKRON

赛米控丹佛斯

3-phase bridge inverter

Features • One screw mounting module • Fully compatible with SEMITOP® 1,2,3 • Improved thermal performances by aluminium oxide substrate • Trench IGBT technology • CAL technology FWD • Integrated NTC temperature sensor Typical Applications* • Inverter up to 42 kVA • Typ. motor power 18,5k

文件：306.81 Kbytes 页数：2 Pages

SEMIKRON

赛米控丹佛斯

Half-Bridge (Full SiC)

Features*  Optimized design for superior thermal performance  Extremely low inductance design  Press-Fit contact technology  1200V Planar Gen3 SiC MOSFET  Simple to drive with +15V gate voltage  Optimized switching stability thanks to module integrated gate resistors  Integrated NT

文件：1.05884 Mbytes 页数：7 Pages

SEMIKRON

赛米控丹佛斯

3-Level TNPC

Features* • Optimized design for superior thermal performances • Low inductive design • Press-Fit contact technology • 1200V Trench IGBT4 Fast (F4) • 650V Trench IGBT3 (E3) • Robust and soft switching CAL4F diode technology • Integrated NTC temperature sensor • UL recognized file no. E 6

文件：1.2142 Mbytes 页数：9 Pages

SEMIKRON

赛米控丹佛斯

isc Schottky Barrier Rectifier

FEATURES ·Multi-layer Metal -Silicon Potential Structure ·Low Leakage Current ·High Current Capability, High Efficiency ·High Junction Temperature Capability

文件：277 Kbytes 页数：2 Pages

ISC

无锡固电

Surface Mount Schottky Rectifiers- Common Cathode

Nominal Current 20 A Repetitive peak reverse voltage 20...100 V Plastic case TO-263 Weight approx. 1.6 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

文件：117.04 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ pro

文件：35.15 Kbytes 页数：2 Pages

POLYFET

Surface Mount Schottky Rectifiers- Common Cathode

Nominal Current 20 A Repetitive peak reverse voltage 20...100 V Plastic case TO-263 Weight approx. 1.6 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

文件：117.04 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

Surface Mount Schottky Rectifiers ??Single Diode

Surface Mount Schottky Rectifiers – Single Diode • Nominal Current 20 A • Repetitive peak reverse voltage 20...45 V • Plastic case TO-263AB • Weight approx. 1.6 g • Plastic material has UL classifica

文件：140.73 Kbytes 页数：2 Pages

DIOTEC

德欧泰克