N‐Channel MOSFET Driver

Features Latchup free operation via all-around dielectric isolation Reduced leakage current & parasitic capacitance for improved power consumption & higher speed N-Channel FET full bridge with high side chop capability Maximum bootstrap supply voltage 95VDC 1000pF load drive at ≥1MHz, tr / t

文件：416.64 Kbytes 页数：10 Pages

SS

SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● For use in low voltage,high frequenc

文件：40.61 Kbytes 页数：2 Pages

HY

虹扬科技

SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● For use in low voltage,high frequenc

文件：107.51 Kbytes 页数：2 Pages

HY

虹扬科技

16Dot*32Dot LED DOT MATRIX

文件：1.81857 Mbytes 页数：9 Pages

SEOUL

首尔半导体