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首页>SIR664DP-T1-GE3>芯片详情
SIR664DP-T1-GE3_VISHAY/威世科技_MOSFET 60V 6mOhm@10V 60A N-Ch G-IV柒号芯城
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产品属性
- 类型
描述
- 型号:
SIR664DP-T1-GE3
- 功能描述:
MOSFET 60V 6mOhm@10V 60A N-Ch G-IV
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
60 V
- 闸/源击穿电压:
+/- 20 V
- 漏极连续电流:
60 A 电阻汲极/源极
- RDS(导通):
6 mOhms
- 配置:
Single
- 最大工作温度:
+ 150 C
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerPAK-SO-8
- 封装:
Reel
供应商
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