N-Channel 45 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • 45 V Drain-source break-down voltage • Tuned for low Qg and Qoss • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • High power densit

文件：232.03 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

文件：178.87 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

文件：177.76 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

文件：176.32 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Primary side switch • Synchronous rectification • DC/DC converter • Moto

文件：190.72 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

文件：177.42 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

文件：176.2 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • 100 Rg and UIS tested • Optimized for high-side switching in synchronous buck converters • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC conversion • Battery protec

文件：404.08 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：R472；Package：PowerPAKSO-8；N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET®Power MOSFET • Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch  

文件：106.72 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

P-Channel 20 V (D-S) MOSFET

文件：354.45 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司