首页 >SII9630BOC>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LowDistortion750MHzClosed-LoopBufferAmp | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
UPSNetworkManagementCard2 | SCHNEIDERSchneider Electric 施耐德施耐德电气 | SCHNEIDER | ||
PC133ClockGeneratorforSiS630/PentiumIII&SiS540/Socket7Applications | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
PC133ClockGeneratorforSiS630/PentiumIII&SiS540/Socket7Applications | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
6.5A,200V,0.800Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) | IRF International Rectifier | IRF | ||
PowerMOSFETS FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •P-Channel •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutparts | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFETS FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •P-Channel •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancher | IRF International Rectifier | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILICON IMAGE |
23+ |
BGA-64 |
12500 |
全新原装现货,假一赔十 |
询价 | ||
SILICON |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SILICON |
17+ |
BGA |
1150 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
LATTICE SEMICONDUCTOR |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 | ||
SILICON |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
SILICON |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
21+ |
N/A |
2224 |
全新原装亏本出 |
询价 | |||
SILICON |
1733+ |
QFN |
6528 |
只做进口原装正品假一赔十! |
询价 | ||
SILICON |
18+ |
QFN |
32429 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
SiliconIm |
2019 |
QFN |
55000 |
进口原装正品假一赔十可开增票 |
询价 |
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