E Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for

文件：183.32 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

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ISC

无锡固电

E Series Power MOSFET with Fast Body Diode

·Fast body diode MOSFET using E series technology\n·Reduced trr, Qrr, and IRRM\n·Low figure-of-merit (FOM) Ron x Qg;

Vishay

威世

N-Channel Super Junction Power MOSFET II

文件：822.87 Kbytes 页数：8 Pages

HMSEMI

华之美半导体

N-Channel Super Junction MOSFET

文件：719.8 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

N-Channel Super Junction Power MOSFET II

文件：822.87 Kbytes 页数：8 Pages

HMSEMI

华之美半导体