iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.28Ω (MAX) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

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ISC

无锡固电

E Series Power MOSFET

文件：293.59 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

文件：173.54 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

文件：173.54 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

文件：173.54 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

·Low figure-of-merit (FOM) Ron x Qg\n·Low input capacitance (Ciss)\n·Reduced switching and conduction losses;

Vishay

威世