首页 >SIHFR9014T>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SIHFR9014T | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：2.01341 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.53358 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：2.01341 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.53358 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：2.01341 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.53358 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：2.01341 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.53358 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET 文件：1.16375 Mbytes 页数：13 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET 文件：1.16375 Mbytes 页数：13 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
SIHFR9014T
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
VB |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
询价 | ||
V |
24+ |
TO-252-2 |
5000 |
只做原装公司现货 |
询价 | ||
VISHAY |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY |
23+ |
TO-252 |
4500 |
原厂原装正品 |
询价 | ||
VISHAY |
24+ |
TO-252 |
12000 |
原装正品 假一罚十 可拆样 |
询价 | ||
NK/南科功率 |
2025+ |
TO-252-2 |
986966 |
国产 |
询价 | ||
VISHAY |
24+ |
TO-252 |
25836 |
新到现货，只做全新原装正品 |
询价 | ||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
Vishay |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 |
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