Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz) • Sink

文件：2.81499 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz) • Sink

文件：2.81499 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：1.66555 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：1.66555 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Vishay

威世

Power MOSFET

Vishay

威世