Power MOSFET

FEATURES • Surface-mount (IRFBC30S, SiHFBC30S) • Low-profile through-hole (IRFBC30L, SiHFBC30L) • Available in tape and reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of c

文件：310.37 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.10117 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件：961.84 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：961.84 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：961.84 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Surface-mount (IRFBC30S, SiHFBC30S)\nLow-profile through-hole (IRFBC30L, SiHFBC30L)\nAvailable in tape and reel (IRFBC30S, SiHFBC30S);

Vishay

威世