iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) • Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：328.22 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：2.98806 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

文件：590.8 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) • Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：328.74 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) • Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：322.25 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：387.52 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

文件：342.98 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10735 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

文件：342.98 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

文件：342.98 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司