SIHFBE20-E3规格书供应代理威世科技Vishay-114ic电子网

首页 >SIHFBE20-E3>规格书列表

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SIHFBE20-E3	文件：1.00024 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio	VishayVishay Siliconix 威世科技	Vishay
SIHFBC20-E3	文件：2.10734 Mbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
SIHFBC20-E3	文件：4.62363 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFBF20-E3	文件：985.06 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技	Vishay
SIHFBG20-E3	文件：1.08993 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipat	VishayVishay Siliconix 威世科技	Vishay
SIHFDC20-E3	文件：1.06558 Mbytes Page：8 Pages	PowerMOSFET VDS(V)600 RDS(on)(Ω)VGS=10V4.4 Qg(Max.)(nC)18 Qgs(nC)3.0 Qgd(nC)8.9 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness	VishayVishay Siliconix 威世科技	Vishay
SIHFRC20-E3	文件：1.82401 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	VishayVishay Siliconix 威世科技	Vishay
SIHFRC20-E3	文件：4.33972 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFRC20-E3	文件：4.34026 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFUC20-E3	文件：4.34026 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFUC20-E3	文件：4.33972 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFUC20-E3	文件：1.82401 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	VishayVishay Siliconix 威世科技	Vishay
SIHFZ20-E3	文件：1.84167 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION Thetechnologyhasexpandeditsproductbasetoservethelowvoltage,verylowRDS(on)MOSFETtransistorrequirements.Vishay’shighlyefficientgeometryanduniqueprocessinghavebeencombinedtocreatethelowestonresistanceperdeviceperformance.Inadditiontothisfeatureal	VishayVishay Siliconix 威世科技	Vishay
SIHFZ20-E3	文件：1.9864 Mbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技	Vishay

详细参数

型号：
SIHFBE20-E3
制造商：
VISHAY
制造商全称：
Vishay Siliconix
功能描述：
Power MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百视威讯电子科技有限公司	SiHFBE30		23+	N/A	13150	正品授权货源可靠	询价
深圳市宏捷佳电子科技有限公司	SiHFBE30	Vishay	23+	TO-TO-220	33500	全新原装真实库存含13点增值税票!	询价
深圳市新力诚科技有限公司	SiHFBE30	Vishay	2020+	TO-220	52340	公司代理品牌,原装现货超低价清仓!	询价
深圳鹏芯半导体科技(集团)有限公司	SIHFBE30	VISHAY/威世	17+;19+	TO-220	88000	全新现货	询价
深圳市国宇半导体科技有限公司	SiHFBE30	VISHAY/威世	23+	TO-220	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	SIHFBE30	VISHAY/威世	TO-220	22+	6000	十年配单,只做原装	询价
深圳市维尔达电子有限公司	SiHFBE30	aos	2023+	TO-220	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
无锡固电半导体股份有限公司	SiHFBE30	isc	2024	TO-220	3000	国产品牌isc,可替代原装	询价
深圳市创新迹电子有限公司	SIHFBE30	VISHAY/威世	2022+	TO-220	30000	进口原装现货供应,原装假一罚十	询价
深圳市惊羽科技有限公司	SIHFBE30	VISHAY-威世	24+25+/26+27+	TO-220-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价

更多SIHFBE20-E3供应商更新时间2024-5-5 11:36:00

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