Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：140.65 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6.7A@ TC=25℃ · Drain Source Voltage -VDSS=-60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.39 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：280.33 Kbytes 页数：2 Pages

ISC

无锡固电

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：140.65 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司