首页 >SIHF9Z34STL>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SIHF9Z34STL | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | Vishay | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | Vishay | ||
AUTOMOTIVEGRADEAdvancedPlanarTechnology Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnology Features •AdvancedPlanarTechnology •P-ChannelMOSFET •DynamicdV/dTRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated •RepetitiveAvalancheAlloweduptoTjmax •Lead-Free,RoHSCompliant •AutomotiveQualified* | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedProcessTechnology ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
MinisizeofDiscretesemiconductorelements | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
P-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=-60V,Rds(on)=0.14ohm,Id=-18A) Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | Vishay | ||
SurfaceMount Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedPlanarTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
Vishay |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
VISHAY/威世 |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
VBSEMI/台湾微碧 |
23+ |
T0-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
23+ |
N/A |
13150 |
正品授权货源可靠 |
询价 | |||
V |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
VB |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 | ||
V |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
VISHAY/威世 |
22+ |
TO-220 |
34137 |
只做原装进口现货 |
询价 | ||
V |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 |
相关规格书
更多- SIHF9Z34STL-E3
- SIHF9Z34STR-E3
- SIHF9Z34STRR-GE3A
- SIHFB11N50A
- SIHFB13N50A
- SIHFB13N50A
- SIHFB16N50K
- SIHFB16N50K-E3
- SIHFB16N60L
- SIHFB16N60L-E3
- SIHFB17N50L
- SIHFB17N50L
- SIHFB17N60K
- SIHFB17N60K-E3
- SIHFB18N50K
- SIHFB18N50K-E3
- SIHFB20N50K
- SIHFB20N50K
- SIHFB20N50K_V01
- SIHFB20N50K-E3
- SIHFB20S_V01
- SIHFB9N30A-E3
- SIHFB9N60A
- SIHFB9N60A
- SIHFB9N65A
- SIHFB9N65A-E3
- SIHFBC20
- SIHFBC20
- SIHFBC20-E3
- SIHFBC20L
- SIHFBC20L-E3
- SIHFBC20S
- SIHFBC20S
- SIHFBC20S-E3
- SIHFBC20STL
- SIHFBC20STL-E3A
- SIHFBC30
- SIHFBC30A
- SIHFBC30A
- SIHFBC30AL
- SIHFBC30AL_V01
- SIHFBC30AL-E3
- SIHFBC30AL-GE3
- SIHFBC30AS
- SIHFBC30AS
相关库存
更多- SIHF9Z34STR
- SIHF9Z34STRL-GE3A
- SIHFB11N50A
- SIHFB11N50A-E3
- SIHFB13N50A
- SIHFB13N50A-E3
- SIHFB16N50K
- SIHFB16N50K-E3
- SIHFB16N60L
- SIHFB16N60L-E3
- SIHFB17N50L
- SIHFB17N50L-E3
- SIHFB17N60K
- SIHFB17N60K-E3
- SIHFB18N50K
- SIHFB18N50K-E3
- SIHFB20N50K
- SIHFB20N50K
- SIHFB20N50K-E3
- SIHFB20N50K-E3
- SIHFB9N30A
- SIHFB9N60A
- SIHFB9N60A
- SIHFB9N65A
- SIHFB9N65A
- SIHFBC20
- SIHFBC20
- SIHFBC20-E3
- SIHFBC20L
- SIHFBC20L-E3
- SIHFBC20L-GE3
- SIHFBC20S
- SIHFBC20S-E3
- SIHFBC20S-GE3
- SIHFBC20STL-E3
- SIHFBC20STRL-GE3A
- SIHFBC30
- SIHFBC30A
- SIHFBC30A-E3
- SIHFBC30AL
- SIHFBC30AL-E3
- SIHFBC30AL-E3
- SIHFBC30AL-GE3
- SIHFBC30AS
- SIHFBC30AS-E3