IGBT 裸片

The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. • Low turn-off losses\n• Short tail current\n• Positive temperature coefficient\n• Easy paralleling\n\n优势:;

Infineon

英飞凌

650V trench & field stop technology

文件：327.64 Kbytes 页数：9 Pages

Infineon

英飞凌

Package：模具；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 3 CHIP 600V

Infineon

英飞凌

650V Trench & Field Stop technology

Features: • 650V Trench & Field Stop technology • high speed switching series third generation • low VCE(sat) • low EMI • low turn-off losses • positive temperature coefficient • qualified according to JEDEC for target applications Applications: • uninterruptible power supplies • welding

文件：229.54 Kbytes 页数：4 Pages

Infineon

英飞凌