订购数量 | 价格 |
---|---|
1+ |
首页>SIA929DJ-T1-GE3>芯片详情
SIA929DJ-T1-GE3_VISHAY/威世科技_MOSFET -30V 64mOhm@10V 4.5A P-Ch G-III柒号芯城
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SIA929DJ-T1-GE3
- 功能描述:
MOSFET -30V 64mOhm@10V 4.5A P-Ch G-III
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SIA975DJ-T1-GE3
- SIA922EDJ-T1-GE3
- SIAA00DJ-T1-GE3
- SIA921EDJ-TI-GE3IC
- SIAA02DJ-T1-GE3
- SIAA40DJ-T1-GE3
- SIA921EDJ-T1-GE3
- SIAT082SP4-J
- SIA921EDJ-T1-E3
- SIB220CB-A-IS
- SIA921EDJ
- SIB406EDK-T1-GE3
- SIA918EDJ-T1-GE3
- SIB417EDK-T1-GE3
- SIB422EDK-T1-GE3
- SIA914DJ-T1-GE3
- SIB422EDK-T4-GE3
- SIA914ADJ-T1-GE3
- SIB433EDK-T1-GE3
- SIB437EDKT-T1-GE3
- SIA913ADJ-T1-GE3
- SIB441EDK-T1-GE3
- SIA912DJ-T1-GE3
- SIB452DK-T1-GE3
- SIA911DJ-T1-GE3
- SIB456DK-T1-GE3
- SIA911ADJ-T1-GE3
- SIB457EDK-T1-GE3
- SIB660BA-B-IS1
- SIA910EDJ-T1-GE3
- SIB911DK-T1-GE3
- SIB912DK-T1-GE3
- SIA907EDJT-T1-GE3
- SIB914DK-T1-GE3
- SIA907EDJT
- SIBA5-JRAB-DKL
- SIA906EDJ-T4-GE3
- SIBA5-JREB-DKL
- SIBA-JRA
- SIA906EDJ-T1-GE3
- SIBA-JRAB
- SIA817EDJ-T1-GE3
- SIBA-JRE
- SIA817EDJ
- SIBA-JREB
- SIA811DJ-T1-GE3
- SIC05120H-BP
- SIA811ADJ-T1-GE3
- SIC163
- SIA537EDJ-T1-GE3