1 KV THREE TO SIX-CHANNEL DIGITAL ISOLATORS

Features  High-speed operation DC to 10 Mbps  No start-up initialization required  Wide Operating Supply Voltage 3.15 – 5.5 V  Up to 1000 VRMS isolation  High electromagnetic immunity  Low power consumption (typical) 2.3 mA per channel at 10 Mbps  Tri-state outputs with ENAB

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SKYWORKS

思佳讯

1 KV THREE TO SIX-CHANNEL DIGITAL ISOLATORS

文件：1.55225 Mbytes 页数：23 Pages

SILABS

芯科科技

1 KV THREE TO SIX-CHANNEL DIGITAL ISOLATORS

文件：1.55225 Mbytes 页数：23 Pages

SILABS

芯科科技

650 V power Schottky silicon carbide diode

Features No or negligible reverse recovery Switching behavior independent oftemperature Dedicated to PFC applications High forward surge capability Operating Tj from -40 °C to 175 °C ECOPACK®2 compliant component Description The SiC diode is an ultra high performance power Schottky

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STMICROELECTRONICS

意法半导体

Automotive 650 V power Schottky silicon carbide diode

文件：506.95 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体