Features

No or negligible reverse recovery

Switching behavior independent oftemperature

Dedicated to PFC applications

High forward surge capability

Operating Tj from -40 °C to 175 °C

ECOPACK®2 compliant component

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

STPSC8065属于分立半导体产品 > 二极管 - 整流器 - 单。意法半导体（ST）集团制造生产的STPSC8065二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。