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首页>Si7625DN-T1-GE3>芯片详情
Si7625DN-T1-GE3_VISHAY/威世科技_MOSFET -30V 7mOhm@10V 35A P-Ch G-III中天科工二部
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产品属性
- 类型
描述
- 型号:
Si7625DN-T1-GE3
- 功能描述:
MOSFET -30V 7mOhm@10V 35A P-Ch G-III
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
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