丝印：4936；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Ros(oN =35 mO@VGS=10V ® Ros =45 mO@VGS=4.5V ‘@ Super high density cell design for extremely low Ros(oN) ® Exceptional on-resistance and maximum DC curent

文件：2.19984 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Dual N-Channel Enhancement Mode MOSFET

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual N-Channel 30-V (D-S) MOSFET

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VishayVishay Siliconix

威世科技

1.0 AMP SURFACE MOUNT FAST RECOVERY RECTIFIERS

VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * Low leakage current * High reliability

文件：159.62 Kbytes 页数：2 Pages

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