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首页>SI1012X-T1-GE3>芯片详情
SI1012X-T1-GE3_VISHAY/威世科技_MOSFET 20V 0.6A 175mW 700mohm @ 4.5V中天科工二部
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产品属性
- 类型
描述
- 型号
:SI1012X-T1-GE3
- 漏源电压(Vdss)
:20V
- 栅源极阈值电压(最大值)
:900mV @ 250uA
- 漏源导通电阻(最大值)
:700 mΩ @ 600mA,4.5V
- 类型
:N 沟道
- 功率耗散(最大值)
:250mW
供应商
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