丝印：SGT；Package：DO-214AC；400W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.2336 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：120R65A；Package：PowerFLAT；650 V, 75 mΩ typ., 15 A, e-mode PowerGaN transistor

Features • Enhancement mode normally off transistor • Very high switching speed • High power management capability • Extremely low capacitances • Kelvin source pad for optimum gate driving • Zero reverse recovery charge Applications • Adapters for tablets, notebook and AIO • USB type-C PD

文件：649.49 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：40N60NPFD；Package：TO-3P；40A, 600V FIELD STOP IGBT

DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance

文件：437.8 Kbytes 页数：6 Pages

SILAN

士兰微

丝印：60N60FD1；Package：TO-247-3L；60A, 600V FIELD STOP IGBT

DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application. FEATURES  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance

文件：307.8 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：60N60FD1；Package：TO-3P；60A, 600V FIELD STOP IGBT

DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application. FEATURES  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance

文件：307.8 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：60N60D1；Package：TO-247S-3L；60A, 600V FIELD STOP IGBT

DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application. FEATURES  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance

文件：307.8 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：60N60FD1；Package：TO-3PN；60A, 600V FIELD STOP IGBT

DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application. FEATURES  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance

文件：307.8 Kbytes 页数：10 Pages

SILAN

士兰微

Unidirectional Transient

Features: ■ Clamping voltage - 33V, 60V, or 230V ■ 300A peak transient surge current ■ 130 mA minimum holding current ■ Subnanosecond clamping action ■ Low on-state voltage Applications: ■ Telecommunications equipment ■ Data and voice lines ■ Computer modems ■ Alarm systems

文件：81.83 Kbytes 页数：3 Pages

GESS

GE Solid State

Unidirectional Transient

Features: ■ Clamping voltage - 33V, 60V, or 230V ■ 300A peak transient surge current ■ 130 mA minimum holding current ■ Subnanosecond clamping action ■ Low on-state voltage Applications: ■ Telecommunications equipment ■ Data and voice lines ■ Computer modems ■ Alarm systems

文件：81.83 Kbytes 页数：3 Pages

GESS

GE Solid State

Unidirectional Transient

Features: ■ Clamping voltage - 33V, 60V, or 230V ■ 300A peak transient surge current ■ 130 mA minimum holding current ■ Subnanosecond clamping action ■ Low on-state voltage Applications: ■ Telecommunications equipment ■ Data and voice lines ■ Computer modems ■ Alarm systems

文件：81.83 Kbytes 页数：3 Pages

GESS

GE Solid State